领先的亚洲技术制造商选择 Veeco 的 Propel PowerGan MOCVD 系统进行 GaN 电力电子器件和 LED 开发
2015 年 06 月 16 日
June 16, 2015 - Veeco Instruments Inc.(Nasdaq:VECO) announced recently that a worldwide technology leader in electronics and electronic components manufacturing, has qualified and accepted the Propel™ Power Gallium Nitride (GaN) Metal Organic Chemical Vapor Deposition (MOCVD) System for GaN-on-Silicon (Si) power electronics and light emitting diode (LED) research and development.
In response to strong consumer demand for power electronic devices, gallium nitride MOCVD is advancing a new generation of power switching devices that feature higher efficiency, smaller form factors and lower device weight.This 200mm Veeco MOCVD system enables the development of highly-efficient GaN-based devices that will accelerate the industry’s transition from R&D to high volume production.
“As an industry leader, this customer's qualification and acceptance of the Propel PowerGaN system is a significant step forward for the entire power electronics market,” said Jim Jenson, Senior Vice President, Veeco MOCVD Operations. “The Propel PowerGaN system has quickly become the platform enabling our customers to accelerate their power electronics product development and provide a transition to high volume manufacturing.”
In a report titled GaN:Primed for Power, Yole Developpement market analysis firm claims 600V devices will open a broad range of applications that will culminate in a market size of $600 million by 2020.