参考文献

Veeco CNT ALD customers are at the leading edge of ALD research around the world resulting in more publications than on any other commercial ALD platforms.

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Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition

Author(s): Barr, Ma�ssa K S: Assaud, Lo�c: Wu, Yanlin: Laffon, Carine: Parent, Philippe: Bachmann, Julien: Santinacci, Lionel

Published: 2015

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0013468615300839

Optical and structural properties of cobalt-permalloy slanted columnar heterostructure thin films

Author(s): Sekora, Derek: Briley, Chad: Schubert, Mathias: Schubert, Eva

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0169433216322206

Light emission, light detection and strain sensing with nanocrystalline graphene

Author(s): Riaz, Adnan, Pyatkov, Feliks, Alam, Asiful, Dehm, Simone, Felten, Alexandre, Chakravadhanula, Venkata S K, Flavel, Benjamin S, K�bel, Christian, Lemmer, Uli and Krupke, Ralph

Published: 2015

Web link: http://iopscience.iop.org/article/10.1088/0957-4484/26/32/325202

Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Author(s): Kumar, Manoj, Tekcan, Burak and Okyay, Ali Kemal

Published: 2014

Web link: http://linkinghub.elsevier.com/retrieve/pii/S1567173914003101

Probing the spatial extension of light trapping-induced enhanced Raman scattering in high-density Si nanowire arrays

Author(s): Bontempi, Nicol�, Salmistraro, Marco, Ferroni, Matteo, Depero, Laura E and Alessandri, Ivano

Published: 2014

Web link: http://stacks.iop.org/0957-4484/25/i=46/a=465705?key=crossref.cc68c4f241965fd1e20b0d52543c8dd9

Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy

Author(s): Persson, O, Lind, E, Lundgren, E, Rubio-Zuazo, J, Castro, G R, Wernersson, L E, Mikkelsen, A and Timm, R

Published: 2013

Web link: http://link.aip.org/link/AAIDBI/v3/i7/p072131/s1&Agg=doi

Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors

Author(s): Galatage, R V, Dong, H., Zhernokletov, D. M., Brennan, B, Hinkle, C L, Wallace, R M and Vogel, E M

Published: 2013

Web link: http://link.aip.org/link/APPLAB/v102/i13/p132903/s1&Agg=doi

Surface engineered angstrom thick ZnO-sheathed TiO 2nanowires as photoanodes for performance enhanced dye-sensitized solar cells

Author(s): Ulusoy, T G, Ghobadi, A and Okyay, A K

Published: 2014

Web link: http://xlink.rsc.org/?DOI=C4TA03445G

Probing the Structure and Chemistry of Perylenetetracarboxylic Dianhydride on Graphene Before and After Atomic Layer Deposition of Alumina

Author(s): Johns, James E, Karmel, Hunter J, Alaboson, Justice M P and Hersam, Mark C

Published: 2012

Web link: http://pubs.acs.org/doi/abs/10.1021/jz300802k

High-Performance Printed Carbon Nanotube Thin-Film Transistors Array Fabricated by a Nonlithography Technique Using Hafnium Oxide Passivation Layer and Mask

Author(s): Raman Pillai, Suresh Kumar and Chan-Park, Mary B

Published: 2012

Web link: http://pubs.acs.org/doi/abs/10.1021/am302431e