参考文献

Veeco CNT ALD customers are at the leading edge of ALD research around the world resulting in more publications than on any other commercial ALD platforms.

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Emitter formation using laser doping technique on n- and p-type c-Si substrates

Author(s): L�pez, G, Ortega, P, Colina, M, Voz, C and Mart�n, I

Published: 2014

Web link: http://www.sciencedirect.com/science/article/pii/S0169433214024064

Photovoltaic properties of Cu2ZnSnS4 cells fabricated using ZnSnO and ZnSnO/CdS buffer layers

Author(s): Tajima, Shin: Umehara, Mitsutaro: Mise, Takahiro

Published: 2016

Web link: http://iopscience.iop.org/article/10.7567/JJAP.55.112302

Defect-Driven Interfacial Electronic Structures at an Organic/Metal-Oxide Semiconductor Heterojunction

Author(s): Winget, Paul, Schirra, Laura K, Cornil, David, Li, Hong, Coropceanu, Veaceslav, Ndione, Paul F, Sigdel, Ajaya K, Ginley, David S, Berry, Joseph J, Shim, Jaewon, Kim, Hyungchui, Kippelen, Bernard, Bredas, Jean-Luc and Monti, Oliver L A

Published: 2014

Web link: http://doi.wiley.com/10.1002/adma.201305351

Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks

Author(s): Huang, Jhih-Jie: Huang, Li-Tien: Tsai, Meng-Chen: Lee, Min Hung: Chen, Miin-Jang

Published: 2013

Web link: http://jss.ecsdl.org/content/2/12/P524.full

A Nanocoax-Based Electrochemical Sensor

Author(s): Rizal, Binod, Archibald, Michelle M, Connolly, Timothy, Shepard, Stephen, Burns, Michael J, Chiles, Thomas C and Naughton, Michael J

Published: 2013

Web link: http://pubs.acs.org/doi/abs/10.1021/ac402441x

Mechanisms for Substrate-Enhanced Growth during the Early Stages of Atomic Layer Deposition of Alumina onto Silicon Nitride Surfaces

Author(s): Lamagna, Luca, Wiemer, Claudia, Perego, Michele, Spiga, Sabina, Rodr�guez, Jes�s, Santiago Coll, David, Grillo, Maria Elena, Klejna, Sylwia and Elliott, Simon D

Published: 2012

Web link: http://pubs.acs.org/doi/abs/10.1021/cm203362d

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

Author(s): Chalker, Paul R, Marshall, Paul A, Romani, Simon, Rosseinsky, Matthew J, Rushworth, Simon, Williams, Paul A, Buckett, John, McSporran, Neil and Ridealgh, John

Published: 2011

Web link: http://journals.cambridge.org/abstract_S1946427411007111

Optical properties of cobalt slanted columnar thin films passivated by atomic layer deposition

Author(s): Schmidt, D.: Schubert, E.: Schubert, M.

Published: 2012

Web link:

Interfacial Properties of ALD-Deposited Al2O3/p-Type Germanium MOS Structures: Influence of Oxidized Ge Interfacial Layer Dependent on Al2O3 Thickness

Author(s): Botzakaki, M, Kerasidou, A, Sygellou, L., Ioannou-Sougleridis, V., Xanthopoulos, N, Kennou, S, Ladas, S., Vouroutzis, N Z, Speliotis, T and Skarlatos, D

Published: 2012

Web link: http://ssl.ecsdl.org/cgi/doi/10.1149/2.015202ssl

Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer

Author(s): Monaghan, S.: O?Mahony, A: Cherkaoui, K: OConnor, E: Povey, I. M.: Nolan, M G: O?Connell, D: Pemble, M E: Hurley, P K: Provenzano, G: Crupi, F: Newcomb, S B

Published: 2011

Web link: http://link.aip.org/link/JVTBD9/v29/i1/p01A807/s1&Agg=doi